CSD22206W Datasheet دیتاشیت

CSD22206W Datasheet

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نام دیتاشیت CSD22206W Datasheet
حجم فایل 974.597 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

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سایر مستندات

CSD22206WT 15 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD22206WT
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.7W
  • Total Gate Charge (Qg@Vgs): 14.6nC@4.5V
  • Drain Source Voltage (Vdss): 8V
  • Input Capacitance (Ciss@Vds): 2275pF@4V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.05V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@2A,4.5V
  • Package: BGA-9
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 1.7W (Ta)
  • Drain to Source Voltage (Vdss): 8V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
  • Vgs (Max): -6V
  • FET Type: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2275pF @ 4V
  • Packaging: Cut Tape (CT)
  • Package / Case: 9-UFBGA, DSBGA
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 4.5V
  • Supplier Device Package: 9-DSBGA (1.5x1.5)
  • Mounting Type: Surface Mount
  • Base Part Number: CSD222
  • detail: P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5)

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